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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120N06-3M5L-GE3
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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AON7292
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CSD16323Q3
Texas Instruments, N-Channel 25V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™
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TPH2900ENH,L1Q
Toshiba Semiconductor and Storage, N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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