IPD50N06S4L12ATMA2


IPD50N06S4L12ATMA2

Part NumberIPD50N06S4L12ATMA2

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPD50N06S4L12ATMA2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds2890pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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IPD50N06S4L12ATMA2 - Tags

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