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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N06S4L-12 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6035ENZ1C9 Rohm Semiconductor, N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-247,
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IRF720PBF Vishay Siliconix, N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB,
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SUD35N10-26P-GE3 Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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VN2210N2 Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,
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RE1J002YNTCL Rohm Semiconductor, N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),
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DMN62D0LFB-7 Diodes Incorporated, N-Channel 60V 100mA (Ta) 470mW (Ta) Surface Mount 3-X1DFN1006,
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IPD26N06S2L35ATMA2 Infineon Technologies, N-Channel 55V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™
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SPA11N60C3XKSA1 Infineon Technologies, N-Channel 600V 11A (Tc) 33W (Tc) Through Hole PG-TO220-3-31 Full Pack, CoolMOS™
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BUK9217-75B,118 Nexperia USA Inc., N-Channel 75V 64A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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SQM100N10-10_GE3 Vishay Siliconix, N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), Automotive, AEC-Q101, TrenchFET®
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PMV30UN2R Nexperia USA Inc., N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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MCQ12N06-TP Micro Commercial Co, N-Channel 60V 12A 3.1W Surface Mount 8-SOP,
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