BSC117N08NS5ATMA1
BSC117N08NS5ATMA1
Part Number BSC117N08NS5ATMA1 Description MOSFET N-CH 80V 49A 8TDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 49A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-7
To learn about the specification of BSC117N08NS5ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC117N08NS5ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC117N08NS5ATMA1.
We are offering BSC117N08NS5ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSC117N08NS5ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC117N08NS5 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 11.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3.8V @ 22µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 40V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-7 Package / Case 8-PowerTDFN
BSC117N08NS5ATMA1 - Related ProductsMore >>
R6020ENJTL Rohm Semiconductor, N-Channel 600V 20A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),
View
SIHA2N80E-GE3 Vishay Siliconix, N-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack,
View
TK40A10N1,S4X Toshiba Semiconductor and Storage, N-Channel 100V 40A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
PHT6NQ10T,135 Nexperia USA Inc., N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73, TrenchMOS™
View
IPA65R190C7XKSA1 Infineon Technologies, N-Channel 650V 8A (Tc) 30W (Tc) Through Hole PG-TO220-FP, CoolMOS™ C7
View
PHB21N06LT,118 Nexperia USA Inc., N-Channel 55V 19A (Tc) 56W (Tc) Surface Mount D2PAK, TrenchMOS™
View
TK14E65W5,S1X Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220, DTMOSIV
View
SI3456DDV-T1-E3 Vishay Siliconix, N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
IRF2804STRLPBF Infineon Technologies, N-Channel 40V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
View
TK10P60W,RVQ Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
View
ZXMN7A11GTA Diodes Incorporated, N-Channel 70V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223,
View
FDB035N10A ON Semiconductor, N-Channel 100V 120A (Tc) 333W (Tc) Surface Mount D²PAK, PowerTrench®
View
BSC117N08NS5ATMA1 - Tags
English
