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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N03S2L-06 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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IRFB7440PBF Infineon Technologies, N-Channel 40V 120A (Tc) 143W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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RSJ450N04TL Rohm Semiconductor, N-Channel 40V 45A (Ta) 50W (Tc) Surface Mount LPTS,
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