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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N03S2L-06
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD5N20LT4
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Vishay Siliconix, N-Channel 40V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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