Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4168DY-T1-GE3

SI4168DY-T1-GE3

SI4168DY-T1-GE3

Part NumberSI4168DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 24A 8-SOIC

DatasheetSI4168DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4168DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4168DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4168DY-T1-GE3.
We are offering SI4168DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4168DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4168DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1720pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4168DY-T1-GE3 - Related Products

	IPC100N04S52R8ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 75W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™	View
	BSC22DN20NS3GATMA1	Infineon Technologies, N-Channel 200V 7A (Tc) 34W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	BSC016N06NSATMA1	Infineon Technologies, N-Channel 60V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL, OptiMOS™	View
	FQD13N06LTM	ON Semiconductor, N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®	View
	DMN2065UW-7	Diodes Incorporated, N-Channel 20V 2.8A (Ta) 430mW (Ta) Surface Mount SOT-323,	View
	APT47N60BC3G	Microsemi Corporation, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-247 [B],	View
	STD5N52U	STMicroelectronics, N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount DPAK, UltraFASTmesh™	View
	DMT6009LSS-13	Diodes Incorporated, N-Channel 60V 10.8A (Ta) 1.25W (Ta) Surface Mount 8-SO,	View
	IRFBE20PBF	Vishay Siliconix, N-Channel 800V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB,	View
	TSM1NB60CW RPG	Taiwan Semiconductor Corporation, N-Channel 600V 1A (Tc) 39W (Tc) Surface Mount SOT-223,	View
	SIR688DP-T1-GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IPB009N03LGATMA1	Infineon Technologies, N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View

SI4168DY-T1-GE3 - Tags

SI4168DY-T1-GE3 SI4168DY-T1-GE3 PDF SI4168DY-T1-GE3 datasheet SI4168DY-T1-GE3 specification SI4168DY-T1-GE3 image SI4168DY-T1-GE3 India Renesas Electronics India SI4168DY-T1-GE3 buy SI4168DY-T1-GE3 SI4168DY-T1-GE3 price SI4168DY-T1-GE3 distributor SI4168DY-T1-GE3 supplier SI4168DY-T1-GE3 wholesales