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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD9411L-F085
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 20V
FET Feature -
Power Dissipation (Max) 48.4W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IXTT110N10L2
IXYS, N-Channel 100V 110A (Tc) 600W (Tc) Surface Mount TO-268, Linear L2™
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STO36N60M6
STMicroelectronics, N-Channel 600V 30A (Tc) 230W (Tc) Surface Mount TOLL (HV), MDmesh™ M6
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STF4N90K5
STMicroelectronics, N-Channel 900V 4A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ K5
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SQD50N04-5M6L_GE3
Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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IRFZ48NPBF
Infineon Technologies, N-Channel 55V 64A (Tc) 130W (Tc) Through Hole TO-220AB, HEXFET®
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IPN60R600P7SATMA1
Infineon Technologies, N-Channel 600V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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SIHG30N60E-GE3
Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC,
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2N7002K-TP
Micro Commercial Co, N-Channel 60V 340mA (Ta) 350mW (Ta) Surface Mount SOT-23,
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IXTN22N100L
IXYS, N-Channel 1000V 22A (Tc) 700W (Tc) Chassis Mount SOT-227B,
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PSMN020-100YS,115
Nexperia USA Inc., N-Channel 100V 43A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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TSM4NB60CI C0G
Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 50W (Tc) Through Hole ITO-220AB,
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BSC059N04LSGATMA1
Infineon Technologies, N-Channel 40V 16A (Ta), 73A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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