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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R1-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7380pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DMN3009LFVW-7
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BUK7Y65-100EX
Nexperia USA Inc., N-Channel 100V 19A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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BUK9M120-100EX
Nexperia USA Inc., N-Channel 100V 11.5A (Tc) 44W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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SUP85N10-10-E3
Vishay Siliconix, N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB, TrenchFET®
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DMN3025LFG-7
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IRFR024NTRPBF
Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
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PSMN4R2-60PLQ
Nexperia USA Inc., N-Channel 60V 130A (Tc) 263W (Tc) Through Hole TO-220AB,
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DMN10H170SK3-13
Diodes Incorporated, N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-252-3,
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IRFL4310TRPBF
Infineon Technologies, N-Channel 100V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
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AUIRLS8409-7P
Infineon Technologies, N-Channel 40V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead), Automotive, AEC-Q101, HEXFET®
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RQ3E150GNTB
Rohm Semiconductor, N-Channel 30V 15A (Ta) 2W (Ta), 17.2W (Tc) Surface Mount 8-HSMT (3.2x3),
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IXFP60N25X3
IXYS, N-Channel 250V 60A (Tc) 320W (Tc) Through Hole TO-220AB (IXFP), HiPerFET™
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