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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R1-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7380pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9612-55B,118
Nexperia USA Inc., N-Channel 55V 75A (Tc) 157W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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ON Semiconductor, N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),
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VN0300L-G
Microchip Technology, N-Channel 30V 640mA (Tj) 1W (Tc) Through Hole TO-92-3,
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Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOP,
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SI5418DU-T1-GE3
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Toshiba Semiconductor and Storage, N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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