IPB60R120C7ATMA1
IPB60R120C7ATMA1
Part Number IPB60R120C7ATMA1 Description MOSFET N-CH 650V 19A TO263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 19A (Tc) 92W (Tc) Surface Mount PG-TO263-3
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IPB60R120C7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB60R120C7A Standard Package 1000 Manufacturer Infineon Technologies Series CoolMOS™ C7 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V FET Feature - Power Dissipation (Max) 92W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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