Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB60R099C6ATMA1

IPB60R099C6ATMA1

IPB60R099C6ATMA1

Part NumberIPB60R099C6ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 37.9A TO263

DatasheetIPx60R099C6

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB60R099C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB60R099C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB60R099C6ATMA1.
We are offering IPB60R099C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB60R099C6ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx60R099C6
Standard Package	1000
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	119nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2660pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB60R099C6ATMA1 - Related Products

	RV3C002UNT2CL	Rohm Semiconductor, N-Channel 20V 150mA (Ta) 100mW (Ta) Surface Mount VML0604,	View
	TSM80N950CH C5G	Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),	View
	IRL3705ZPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 130W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM3446CX6 RFG	Taiwan Semiconductor Corporation, N-Channel 20V 5.3A (Tc) 2W (Ta) Surface Mount SOT-26,	View
	BSC600N25NS3GATMA1	Infineon Technologies, N-Channel 250V 25A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	ZVNL110GTA	Diodes Incorporated, N-Channel 100V 600mA (Ta) 1.1W (Ta) Surface Mount SOT-223,	View
	IRFR3518TRPBF	Infineon Technologies, N-Channel 80V 38A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	FQD10N20LTM	ON Semiconductor, N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak), QFET®	View
	IXTH16N20D2	IXYS, N-Channel 200V 16A (Tc) 695W (Tc) Through Hole TO-247 (IXTH),	View
	IRF7452TRPBF	Infineon Technologies, N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	TSM2N100CP ROG	Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Surface Mount TO-252, (D-Pak),	View
	IRLU014PBF	Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,	View

IPB60R099C6ATMA1 - Tags

IPB60R099C6ATMA1 IPB60R099C6ATMA1 PDF IPB60R099C6ATMA1 datasheet IPB60R099C6ATMA1 specification IPB60R099C6ATMA1 image IPB60R099C6ATMA1 India Renesas Electronics India IPB60R099C6ATMA1 buy IPB60R099C6ATMA1 IPB60R099C6ATMA1 price IPB60R099C6ATMA1 distributor IPB60R099C6ATMA1 supplier IPB60R099C6ATMA1 wholesales