IPB60R080P7ATMA1
IPB60R080P7ATMA1
Part Number IPB60R080P7ATMA1 Description MOSFET N-CH TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB60R080P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB60R080P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB60R080P7ATMA1.
We are offering IPB60R080P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB60R080P7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB60R080P7 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 400V FET Feature - Power Dissipation (Max) 129W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R080P7ATMA1 - Related ProductsMore >>
CEDM7001VL TR Central Semiconductor Corp, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,
View
APT7F120B Microsemi Corporation, N-Channel 1200V 7A (Tc) 335W (Tc) Through Hole TO-247 [B],
View
IRLR2905ZTRPBF Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
PSMN7R6-60BS,118 Nexperia USA Inc., N-Channel 60V 92A (Tc) 149W (Tc) Surface Mount D2PAK,
View
CSD18540Q5BT Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
View
SPB11N60C3ATMA1 Infineon Technologies, N-Channel 650V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
View
STD45N10F7 STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VII
View
IPA65R380E6XKSA1 Infineon Technologies, N-Channel 650V 10.6A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
STB10N95K5 STMicroelectronics, N-Channel 950V 8A (Tc) 130W (Tc) Surface Mount D2PAK, SuperMESH5™
View
IRLR8259TRPBF Infineon Technologies, N-Channel 25V 57A (Tc) 48W (Tc) Surface Mount D-Pak, HEXFET®
View
TK14G65W,RQ Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV
View
IXFK120N65X2 IXYS, N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™
View
IPB60R080P7ATMA1 - Tags
English
