CSD13306W
CSD13306W
Part Number CSD13306W
Description MOSFET N-CH 12V 3.5A
Package / Case 6-UFBGA, DSBGA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
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CSD13306W - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD13306W
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 4.5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 6V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
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