Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx600N25N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2350pF @ 100V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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IPB039N10N3GATMA1	Infineon Technologies, N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
ZVNL110A	Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
IPD80R360P7ATMA1	Infineon Technologies, N-Channel 800V 13A (Tc) 84W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
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PMZB290UNE,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
DMN3150L-7	Diodes Incorporated, N-Channel 28V 3.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
IXFK64N60P3	IXYS, N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™	View
IRLML2030TRPBF	Infineon Technologies, N-Channel 30V 2.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View

IPB600N25N3GATMA1

Part NumberIPB600N25N3GATMA1