IPB180N04S400ATMA1
IPB180N04S400ATMA1
Part Number IPB180N04S400ATMA1
Description MOSFET N-CH 40V 180A TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
To learn about the specification of IPB180N04S400ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB180N04S400ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB180N04S400ATMA1.
We are offering IPB180N04S400ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB180N04S400ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-00
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.98mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 22880pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S400ATMA1 - Related ProductsMore >>
DMN10H170SFG-13
Diodes Incorporated, N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8,
View
IRF2807ZPBF
Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
View
NVD3055L170T4G
ON Semiconductor, N-Channel 60V 9A (Ta) 1.5W (Ta) Surface Mount DPAK,
View
PSMN015-60PS,127
Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Through Hole TO-220AB,
View
FDA20N50-F109
ON Semiconductor, N-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-3PN, UniFET™
View
SI4866DY-T1-E3
Vishay Siliconix, N-Channel 12V 11A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
BUK626R2-40C,118
Nexperia USA Inc., N-Channel 40V 90A (Tc) 128W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
View
IRFR024NTRPBF
Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
IPB054N06N3GATMA1
Infineon Technologies, N-Channel 60V 80A (Tc) 115W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
TK10A80W,S4X
Toshiba Semiconductor and Storage, N-Channel 800V 9.5A (Ta) 40W (Tc) Through Hole TO-220SIS, DTMOSIV
View
IPB180N04S401ATMA1
Infineon Technologies, N-Channel 40V 180A (Tc) 188W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
TK42A12N1,S4X
Toshiba Semiconductor and Storage, N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
IPB180N04S400ATMA1 - Tags