FQT1N80TF-WS
FQT1N80TF-WS
Part Number FQT1N80TF-WS Description MOSFET N-CH 800V 0.2A SOT-223 Package / Case TO-261-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3
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FQT1N80TF-WS - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQT1N80TF_WS Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-3 Package / Case TO-261-3
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