IPB083N15N5LFATMA1
IPB083N15N5LFATMA1
Part Number IPB083N15N5LFATMA1 Description MOSFET N-CH 150V 105A TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 105A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB083N15N5LFATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB083N15N5LFATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB083N15N5LFATMA1.
We are offering IPB083N15N5LFATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB083N15N5LFATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB083N15N5LF Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 105A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.9V @ 134µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 75V FET Feature - Power Dissipation (Max) 179W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB083N15N5LFATMA1 - Related ProductsMore >>
BSP372NH6327XTSA1 Infineon Technologies, N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, OptiMOS™
View
STW21N90K5 STMicroelectronics, N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole TO-247-3, SuperMESH5™
View
IRF2204SPBF Infineon Technologies, N-Channel 40V 170A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®
View
TK8A10K3,S5Q Toshiba Semiconductor and Storage, N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS, U-MOSIV
View
TSM250N02CX RFG Taiwan Semiconductor Corporation, N-Channel 20V 5.8A (Tc) 1.56W (Tc) Surface Mount SOT-23,
View
SIHG47N60AEL-GE3 Vishay Siliconix, N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC, EL
View
PMV20XNEAR Nexperia USA Inc., N-Channel 20V 6.3A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
View
SIR640ADP-T1-GE3 Vishay Siliconix, N-Channel 40V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIRA52ADP-T1-RE3 Vishay Siliconix, N-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
2SK3019TL Rohm Semiconductor, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount EMT3,
View
CSD17571Q2 Texas Instruments, N-Channel 30V 22A (Ta) 2.5W (Ta) Surface Mount 6-SON (2x2), NexFET™
View
SSM3K35AMFV,L3F Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount VESM, U-MOSIII
View
IPB083N15N5LFATMA1 - Tags
English
