IPB049NE7N3GATMA1

Part NumberIPB049NE7N3GATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB049NE7N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4750pF @ 37.5V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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SQJA80EP-T1_GE3	Vishay Siliconix, N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
DMT6010SCT	Diodes Incorporated, N-Channel 60V 98A (Tc) 2.3W (Ta), 104W (Tc) Through Hole TO-220-3,	View
IRF7807VTRPBF	Infineon Technologies, N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
SQJ402EP-T1_GE3	Vishay Siliconix, N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
DN3765K4-G	Microchip Technology, N-Channel 650V 300mA (Tj) 2.5W (Ta) Surface Mount TO-252-3,	View
STP20NF20	STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220AB, STripFET™	View