IPB020N10N5LFATMA1
IPB020N10N5LFATMA1
Part Number IPB020N10N5LFATMA1 Description MOSFET N-CH 100V D2PAK-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3
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IPB020N10N5LFATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB020N10N5LFATMA1 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™-5 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.1V @ 270µA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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