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FDD3860

FDD3860

Part NumberFDD3860

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 6.2A DPAK

DatasheetFDD3860

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA)

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FDD3860 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD3860
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1740pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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