FDD3860
FDD3860
Part Number FDD3860
Description MOSFET N-CH 100V 6.2A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Detailed Description N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA)
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FDD3860 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD3860
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 50V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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