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IPA65R650CEXKSA1

IPA65R650CEXKSA1

Part NumberIPA65R650CEXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO-220-3

DatasheetIPx65R650CE Datasheet

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 28W (Tc) Through Hole TO-220 Full Pack

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IPA65R650CEXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx65R650CE Datasheet
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack

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