DMN10H100SK3-13
DMN10H100SK3-13
Part Number DMN10H100SK3-13 Description MOSFET N-CH 100V 18A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252
To learn about the specification of DMN10H100SK3-13, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMN10H100SK3-13 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMN10H100SK3-13.
We are offering DMN10H100SK3-13 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMN10H100SK3-13 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN10H100SK3 Standard Package 1 Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN10H100SK3-13 - Related ProductsMore >>
IRFB3306PBF Infineon Technologies, N-Channel 60V 120A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
View
FDP26N40 ON Semiconductor, N-Channel 400V 26A (Tc) 265W (Tc) Through Hole TO-220-3, UniFET™
View
CSD17301Q5A Texas Instruments, N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
BSP295H6327XTSA1 Infineon Technologies, N-Channel 60V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
DMN95H8D5HCTI Diodes Incorporated, N-Channel 950V 30W (Tc) Through Hole ITO-220AB,
View
SQS460EN-T1_GE3 Vishay Siliconix, N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
PSMN4R8-100BSEJ Nexperia USA Inc., N-Channel 100V 120A (Tj) 405W (Tc) Surface Mount D2PAK,
View
IRFB7430PBF Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
View
FQB5N90TM ON Semiconductor, N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
IPB100N06S205ATMA4 Infineon Technologies, N-Channel 55V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
ZXMN10A07FTA Diodes Incorporated, N-Channel 100V 700mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
AO3400A Alpha & Omega Semiconductor Inc., N-Channel 30V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,
View
DMN10H100SK3-13 - Tags
English
