Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB25N50E-GE3

SIHB25N50E-GE3

SIHB25N50E-GE3

Part NumberSIHB25N50E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 26A TO263

DatasheetSIHB25N50E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SIHB25N50E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB25N50E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB25N50E-GE3.
We are offering SIHB25N50E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB25N50E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB25N50E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1980pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB25N50E-GE3 - Related Products

	SIHB16N50C-E3	Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),	View
	STU6N90K5	STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ K5	View
	BUK9225-55A,118	Nexperia USA Inc., N-Channel 55V 43A (Tc) 94W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	STL90N6F7	STMicroelectronics, N-Channel 60V 90A (Tc) 4.8W (Ta), 94W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	DMN67D8L-7	Diodes Incorporated, N-Channel 60V 210mA (Ta) 340mW (Ta) Surface Mount SOT-23,	View
	NTF3055-100T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261),	View
	NVD6495NLT4G-VF01	ON Semiconductor, N-Channel 100V 25A (Tc) 83W (Tc) Surface Mount DPAK,	View
	IRFU320PBF	Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	FDD8447L	ON Semiconductor, N-Channel 40V 15.2A (Ta), 50A (Tc) 3.1W (Ta), 44W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	VN2450N8-G	Microchip Technology, N-Channel 500V 250mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	NVMFS5C426NLT1G	ON Semiconductor, N-Channel 40V 41A (Ta), 237A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	FQP6N60C	ON Semiconductor, N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3, QFET®	View

SIHB25N50E-GE3 - Tags

SIHB25N50E-GE3 SIHB25N50E-GE3 PDF SIHB25N50E-GE3 datasheet SIHB25N50E-GE3 specification SIHB25N50E-GE3 image SIHB25N50E-GE3 India Renesas Electronics India SIHB25N50E-GE3 buy SIHB25N50E-GE3 SIHB25N50E-GE3 price SIHB25N50E-GE3 distributor SIHB25N50E-GE3 supplier SIHB25N50E-GE3 wholesales