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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R8-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 9710pF @ 25V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 40V 3.6W (Ta), 55W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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Toshiba Semiconductor and Storage, N-Channel 60V 17A (Tc) 1.6W (Ta), 34W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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SIHP21N60EF-GE3
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SQP90142E_GE3
Vishay Siliconix, N-Channel 200V 78.5A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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R6009KNJTL
Rohm Semiconductor, N-Channel 600V 9A (Tc) 94W (Tc) Surface Mount TO-263,
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STP5NK100Z
STMicroelectronics, N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-220AB, SuperMESH3™
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IPD60R600P7SAUMA1
Infineon Technologies, N-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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Vishay Siliconix, N-Channel 20V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®
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IPB027N10N3GATMA1
Infineon Technologies, N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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TK35A08N1,S4X
Toshiba Semiconductor and Storage, N-Channel 80V 35A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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BSZ034N04LSATMA1
Infineon Technologies, N-Channel 40V 19A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8-FL, Automotive, AEC-Q101, OptiMOS™
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