IAUT260N10S5N019ATMA1

Part NumberIAUT260N10S5N019ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IAUT260N10S5N019
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™-5
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	166nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11830pF @ 50V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN

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