HS8K11TB


HS8K11TB

Part NumberHS8K11TB

Manufacturer

Description

Datasheet

Package / Case8-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HS8K11TB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A, 11A
Rds On (Max) @ Id, Vgs17.9mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-UDFN Exposed Pad
Supplier Device PackageHSML3030L10

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HS8K11TB - Tags

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