HN4C51J(TE85L,F)
HN4C51J(TE85L,F)
Part Number HN4C51J(TE85L,F)
Description TRANS 2NPN 120V 0.1A SMV
Package / Case SC-74A, SOT-753
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Base 120V 100mA 100MHz 300mW Surface Mount SMV
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HN4C51J(TE85L,F) - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet HN4C51J
Standard Package 3000
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type 2 NPN (Dual) Common Base
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
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