HN4C51J(TE85L,F)

Part NumberHN4C51J(TE85L,F)

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN4C51J
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 NPN (Dual) Common Base
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	300mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Supplier Device Package	SMV

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ULN2003V12DR	Texas Instruments, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC,	View
IMX3T108	Rohm Semiconductor, Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 180MHz 300mW Surface Mount SMT6,	View
STA460C	Sanken, Bipolar (BJT) Transistor Array 2 NPN Darlington (Dual) 60V 6A 3.2W Through Hole 10-SIP,	View