HN4B01JE(TE85L,F)

Part NumberHN4B01JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN/PNP 50V 0.15A ESV PLN

DatasheetHN4B01JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV

To learn about the specification of HN4B01JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add HN4B01JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of HN4B01JE(TE85L,F).
We are offering HN4B01JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

HN4B01JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN4B01JE
Standard Package	4000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10MA, 100MA
Power - Max	100mW
Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

HN4B01JE(TE85L,F) - Related Products

More >>

SLA6026	Sanken, Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 10A 50MHz 5W Through Hole 12-SIP w/fin,	View
PBSS4350SPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 50V 2.7A 750mW Surface Mount 8-SO,	View
UMY1NTR	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 180MHz, 140MHz 150mW Surface Mount UMT5,	View
DME501010R	Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 100mA 150MHz 150mW Surface Mount SMini5-F3-B,	View
PBSS4041SPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 60V 6.7A, 5.9A 130MHz, 110MHz 2.3W Surface Mount 8-SO,	View
BC847RAZ	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6,	View
DMG204B10R	Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP 20V, 50V 500mA, 100mA 150MHz 300mW Surface Mount Mini6-G4-B,	View
UMZ7NTR	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 320MHz, 260MHz 150mW Surface Mount UMT6,	View
ZDT6753TA	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 100V 2A 175MHz, 140MHz 2.75W Surface Mount SM8,	View
MMDT4146-7-F	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 25V 200mA 300MHz, 250MHz 200mW Surface Mount SOT-363,	View
NSV40302PDR2G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC,	View
EMZ7T2R	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 320MHz, 260MHz 150mW Surface Mount EMT6,	View

HN4B01JE(TE85L,F) - Tags

HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) PDF HN4B01JE(TE85L,F) datasheet HN4B01JE(TE85L,F) specification HN4B01JE(TE85L,F) image HN4B01JE(TE85L,F) India Renesas Electronics India HN4B01JE(TE85L,F) buy HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) price HN4B01JE(TE85L,F) distributor HN4B01JE(TE85L,F) supplier HN4B01JE(TE85L,F) wholesales