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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ZXTC6719MC
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 4A, 3A
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max 1.7W
Frequency - Transition 165MHz, 190MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (3x2)
Base Part Number ZXTC6719MC
BC847PN-7-F
Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 300MHz, 200MHz 200mW Surface Mount SOT-363,
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BC847BVN-7
Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 300MHz, 200MHz 150mW Surface Mount SOT-563,
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BC847QAPNZ
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6,
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ZHB6718TA
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PUMZ2,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 100MHz, 190MHz 300mW Surface Mount 6-TSSOP,
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PBSS4350SPN,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 50V 2.7A 750mW Surface Mount 8-SO,
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PMBT3946VPN,115
Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 240mW Surface Mount SOT-666,
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CPH5506-TL-E
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HN1B04FE-GR,LF
Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6,
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NST3946DXV6T1G
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 500mW Surface Mount SOT-563,
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CPH5524-TL-E
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 3A 380MHz 1.2W Surface Mount 5-CPH,
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MCH6203-TL-E
ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 1A 420MHz 1W Surface Mount 6-MCPH,
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