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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet ZXTC6719MC
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 4A, 3A
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max 1.7W
Frequency - Transition 165MHz, 190MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (3x2)
Base Part Number ZXTC6719MC
DMG204020R
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 40V 3.5A, 3A 190MHz, 270MHz 1.1W Surface Mount SOT-26,
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MMDT5451-7-F
Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 160V, 150V 200mA 300MHz 200mW Surface Mount SOT-363,
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DMG204B10R
Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP 20V, 50V 500mA, 100mA 150MHz 300mW Surface Mount Mini6-G4-B,
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Central Semiconductor Corp, Bipolar (BJT) Transistor Array NPN, PNP Complementary 40V, 60V 600mA 300MHz, 200MHz 350mW Surface Mount SOT-363,
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