HGTP12N60C3D


HGTP12N60C3D

Part NumberHGTP12N60C3D

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGTP12N60C3D - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusNot For New Designs
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)24A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max104W
Switching Energy380µJ (on), 900µJ (off)
Input TypeStandard
Gate Charge48nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)40ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Base Part NumberHGTP12N60

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HGTP12N60C3D - Tags

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