APT33GF120B2RDQ2G
APT33GF120B2RDQ2G
Part Number APT33GF120B2RDQ2G Description IGBT 1200V 64A 357W TMAX Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT NPT 1200V 64A 357W Through Hole
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APT33GF120B2RDQ2G - Product Attributes
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Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT33GF120(B2,L)RDQ2(G) Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Tube Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 64A Current - Collector Pulsed (Icm) 75A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A Power - Max 357W Switching Energy 1.315mJ (on), 1.515mJ (off) Input Type Standard Gate Charge 170nC Td (on/off) @ 25°C 14ns/185ns Test Condition 800V, 25A, 4.3Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant
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