APT45GP120B2DQ2G
APT45GP120B2DQ2G
Part Number APT45GP120B2DQ2G Description IGBT 1200V 113A 625W TMAX Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT PT 1200V 113A 625W Through Hole
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APT45GP120B2DQ2G - Product Attributes
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Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT45GP120B2DQ2(G) Standard Package 1 Manufacturer Microsemi Corporation Series POWER MOS 7® Packaging Tube Part Status Active IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 113A Current - Collector Pulsed (Icm) 170A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A Power - Max 625W Switching Energy 900µJ (on), 905µJ (off) Input Type Standard Gate Charge 185nC Td (on/off) @ 25°C 18ns/100ns Test Condition 600V, 45A, 5Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant
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