FQU2N60CTU
FQU2N60CTU
Part Number FQU2N60CTU
Description MOSFET N-CH 600V 1.9A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
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FQU2N60CTU - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD2N60C, FQU2N60C
Standard Package 5040
Manufacturer ON Semiconductor
Series QFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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