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FQP2N90

FQP2N90

Part NumberFQP2N90

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 900V 2.2A TO-220

DatasheetFQP2N90

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 2.2A (Tc) 85W (Tc) Through Hole TO-220-3

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FQP2N90 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQP2N90
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.2Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 25V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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