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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R1-40E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 52.1nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 25V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),
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BUK9Y4R4-40E,115
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BUK761R7-40E,118
Nexperia USA Inc., N-Channel 40V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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Infineon Technologies, N-Channel 55V 89A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
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Toshiba Semiconductor and Storage, N-Channel 80V 9.6A (Tc) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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ON Semiconductor, N-Channel 60V 6.1A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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