FQB4N80TM
FQB4N80TM
Part Number FQB4N80TM Description MOSFET N-CH 800V 3.9A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of FQB4N80TM, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQB4N80TM with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQB4N80TM.
We are offering FQB4N80TM for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQB4N80TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQB4N80, FQI4N80 Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 130W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB4N80TM - Related ProductsMore >>
IPB054N06N3GATMA1 Infineon Technologies, N-Channel 60V 80A (Tc) 115W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
AOTF2910L Alpha & Omega Semiconductor Inc., N-Channel 100V 22A (Tc) 2.1W (Ta), 27W (Tc) Through Hole TO-220-3F,
View
SUM70040E-GE3 Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
IXFP72N20X3M IXYS, N-Channel 200V 72A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
View
SI7686DP-T1-GE3 Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
BSZ900N20NS3GATMA1 Infineon Technologies, N-Channel 200V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
SPP17N80C3XKSA1 Infineon Technologies, N-Channel 800V 17A (Tc) 208W (Tc) Through Hole PG-TO220-3-1, CoolMOS™
View
SI7850DP-T1-GE3 Vishay Siliconix, N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IGT60R190D1SATMA1 Infineon Technologies, N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3, CoolGaN™
View
BSC017N04NSGATMA1 Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
STD5NM60-1 STMicroelectronics, N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK, MDmesh™
View
BTS282ZE3180AATMA2 Infineon Technologies, N-Channel 49V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-7-1, TEMPFET®
View
FQB4N80TM - Tags
English
