FQB11P06TM
FQB11P06TM
Part Number FQB11P06TM
Description MOSFET P-CH 60V 11.4A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surface Mount D²PAK (TO-263AB)
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FQB11P06TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQB11P06
Standard Package 1
Manufacturer ON Semiconductor
Series QFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 53W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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