FDZ193P
FDZ193P
Part Number FDZ193P
Description MOSFET P-CH 20V 3A 8-WLCSP
Package / Case 6-UFBGA, WLCSP
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 3A (Ta) 1.9W (Ta) Surface Mount 6-WLCSP (1.0x1.5)
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FDZ193P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDZ193P
Standard Package 5000
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.7V, 4.5V
Rds On (Max) @ Id, Vgs 90mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WLCSP (1.0x1.5)
Package / Case 6-UFBGA, WLCSP
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Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,
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