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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9606-75B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 11693pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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BSS87H6327FTSA1
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SIHH14N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 16A (Tc) 147W (Tc) Surface Mount PowerPAK® 8 x 8,
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SUD35N10-26P-GE3
Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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IPA60R400CEXKSA1
Infineon Technologies, N-Channel 600V 10.3A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™ CE
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