FDMS3669S
FDMS3669S
Part Number FDMS3669S Description MOSFET 2N-CH 30V 13A/18A PWR56 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
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FDMS3669S - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet FDMS3669S Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A, 18A Rds On (Max) @ Id, Vgs 10mOhm @ 13A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package Power56
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