FDMS0312AS
FDMS0312AS
Part Number FDMS0312AS Description MOSFET N-CH 30V 18A PT8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount 8-PQFN (5x6)
To learn about the specification of FDMS0312AS, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDMS0312AS with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDMS0312AS.
We are offering FDMS0312AS for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDMS0312AS - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMS0312AS Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench®, SyncFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1815pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerTDFN
FDMS0312AS - Related ProductsMore >>
FDMS8018 ON Semiconductor, N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
View
APT30F50B Microsemi Corporation, N-Channel 500V 30A (Tc) 415W (Tc) Through Hole TO-247 [B], POWER MOS 8™
View
SIHU2N80E-GE3 Vishay Siliconix, N-Channel 800V 2.8A (Tc) 62.5W (Tc) Through Hole IPAK (TO-251),
View
TK32A12N1,S4X Toshiba Semiconductor and Storage, N-Channel 120V 32A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
AUIRF3205ZSTRL Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
View
IXFR64N60Q3 IXYS, N-Channel 600V 42A (Tc) 568W (Tc) Through Hole ISOPLUS247™, HiPerFET™
View
IRLS3813TRLPBF Infineon Technologies, N-Channel 30V 160A (Tc) 195W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
TN2106K1-G Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
View
IXTP01N100D IXYS, N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-220AB,
View
STN3N45K3 STMicroelectronics, N-Channel 450V 600mA (Tc) 3W (Ta) Surface Mount SOT-223, SuperMESH3™
View
TK17N65W,S1F Toshiba Semiconductor and Storage, N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-247, DTMOSIV
View
IXFH24N50 IXYS, N-Channel 500V 24A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
FDMS0312AS - Tags
English
