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FDMC86261P

FDMC86261P

Part NumberFDMC86261P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 150V 2.7A 8MLP

DatasheetFDMC86261P

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)

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FDMC86261P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDMC86261P
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1360pF @ 75V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN

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