Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPP60R600P7
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	363pF @ 400V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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IPD60R1K5CEAUMA1	Infineon Technologies, N-Channel 650V 5A (Tc) 49W (Tc) Surface Mount PG-TO252, CoolMOS™	View
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STP13NM60ND	STMicroelectronics, N-Channel 600V 11A (Tc) 109W (Tc) Through Hole TO-220, FDmesh™ II	View
STW11NK90Z	STMicroelectronics, N-Channel 900V 9.2A (Tc) 200W (Tc) Through Hole TO-247-3, SuperMESH™	View
CSD16301Q2	Texas Instruments, N-Channel 25V 5A (Tc) 2.3W (Ta) Surface Mount 6-SON, NexFET™	View
IRL2910PBF	Infineon Technologies, N-Channel 100V 55A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
PSMN2R0-30YL,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View

IPP60R600P7XKSA1

Part NumberIPP60R600P7XKSA1