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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86367
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 40V
FET Feature -
Power Dissipation (Max) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSC0906NSATMA1
Infineon Technologies, N-Channel 30V 18A (Ta), 63A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
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SIHG15N60E-GE3
Vishay Siliconix, N-Channel 600V 15A (Tc) 180W (Tc) Through Hole TO-247AC,
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IRFS3207ZTRRPBF
Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263), HEXFET®
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STF11N65M5
STMicroelectronics, N-Channel 650V 9A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ V
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SI2304-TP
Micro Commercial Co, N-Channel 30V 2.5A (Ta) 250mW (Ta) Surface Mount SOT-23,
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BSC010NE2LSIATMA1
Infineon Technologies, N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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IXTH200N10T
IXYS, N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH), TrenchMV™
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SIHP12N60E-E3
Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB,
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STL19N60DM2
STMicroelectronics, N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2
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RSQ015N06TR
Rohm Semiconductor, N-Channel 60V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),
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IRLL3303TRPBF
Infineon Technologies, N-Channel 30V 4.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
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IXFH44N50P
IXYS, N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHT™
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