Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4160DY-T1-GE3

SI4160DY-T1-GE3

SI4160DY-T1-GE3

Part NumberSI4160DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25.4A 8-SOIC

DatasheetSI4160DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4160DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4160DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4160DY-T1-GE3.
We are offering SI4160DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4160DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4160DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2071pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4160DY-T1-GE3 - Related Products

	TSM60NB1R4CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak),	View
	IPSA70R600P7SAKMA1	Infineon Technologies, N-Channel 700V 8.5A (Tc) 43.1W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	IPDD60R150G7XTMA1	Infineon Technologies, N-Channel 600V 16A (Tc) 95W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	IXFR32N80Q3	IXYS, N-Channel 800V 24A (Tc) 500W (Tc) Through Hole ISOPLUS247™, HiPerFET™	View
	IPB017N10N5ATMA1	Infineon Technologies, N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	IXTT140N10P	IXYS, N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount TO-268, PolarHT™	View
	IRF3805STRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	AO4468	Alpha & Omega Semiconductor Inc., N-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	PSMN015-60BS,118	Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Surface Mount D2PAK,	View
	STB100N10F7	STMicroelectronics, N-Channel 100V 80A (Tc) 150W (Tc) Surface Mount D2PAK, DeepGATE™, STripFET™ VII	View
	FDMC8554	ON Semiconductor, N-Channel 20V 16.5A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	FDMS7672AS	ON Semiconductor, N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View

SI4160DY-T1-GE3 - Tags

SI4160DY-T1-GE3 SI4160DY-T1-GE3 PDF SI4160DY-T1-GE3 datasheet SI4160DY-T1-GE3 specification SI4160DY-T1-GE3 image SI4160DY-T1-GE3 India Renesas Electronics India SI4160DY-T1-GE3 buy SI4160DY-T1-GE3 SI4160DY-T1-GE3 price SI4160DY-T1-GE3 distributor SI4160DY-T1-GE3 supplier SI4160DY-T1-GE3 wholesales