FDD5612
FDD5612
Part Number FDD5612 Description MOSFET N-CH 60V 5.4A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
To learn about the specification of FDD5612, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDD5612 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDD5612.
We are offering FDD5612 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDD5612 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD5612 Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 30V FET Feature - Power Dissipation (Max) 3.8W (Ta), 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
HAT2279H-EL-E Renesas Electronics America, N-Channel 80V 30A (Ta) 25W (Tc) Surface Mount LFPAK,
View
IPI086N10N3GXKSA1 Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3, OptiMOS™
View
DMN2004K-7 Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
View
DMG3418L-7 Diodes Incorporated, N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23,
View
SIRA58DP-T1-GE3 Vishay Siliconix, N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
NVR5198NLT1G ON Semiconductor, N-Channel 60V 1.7A (Ta) 900mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
IRFS7787TRLPBF Infineon Technologies, N-Channel 75V 76A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
View
SIR696DP-T1-GE3 Vishay Siliconix, N-Channel 125V 60A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
IRLB3813PBF Infineon Technologies, N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
View
BSC017N04NSGATMA1 Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
RS1E200GNTB Rohm Semiconductor, N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface Mount 8-HSOP,
View
DMN32D2LFB4-7 Diodes Incorporated, N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,
View
FDD5612 - Tags
English
