CSD17579Q3AT
CSD17579Q3AT
Part Number CSD17579Q3AT
Description MOSFET N-CH 30V 35A 8VSON
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.15)
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CSD17579Q3AT - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD17579Q3A
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 998pF @ 15V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (3x3.15)
Package / Case 8-PowerVDFN
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