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FDC658P

FDC658P

Part NumberFDC658P

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 30V 4A SSOT-6

DatasheetFDC658P

Package / CaseSOT-23-6 Thin, TSOT-23-6

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Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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FDC658P - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDC658P
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

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