2SJ661-1E
2SJ661-1E
Part Number 2SJ661-1E
Description MOSFET P-CH 60V 38A
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3
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2SJ661-1E - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2SJ661
Standard Package 50
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 38A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V
FET Feature -
Power Dissipation (Max) 1.65W (Ta), 65W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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