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FDA18N50

FDA18N50

Part NumberFDA18N50

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 500V 19A TO-3P

DatasheetFDA18N50

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 19A (Tc) 239W (Tc) Through Hole TO-3PN

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FDA18N50 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDA18N50
Standard Package	450
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	265mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2860pF @ 25V
FET Feature	-
Power Dissipation (Max)	239W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN
Package / Case	TO-3P-3, SC-65-3

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FDA18N50 - Tags

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