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RCD100N19TL

RCD100N19TL

Part NumberRCD100N19TL

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 190V 10A CPT3

DatasheetRCD100N19

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

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RCD100N19TL - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RCD100N19
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	190V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
FET Feature	-
Power Dissipation (Max)	850mW (Ta), 20W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	CPT3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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