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EPC2110


EPC2110

Part NumberEPC2110

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Detailed Description

EPC2110 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerEPC
SerieseGaN®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Package / CaseDie
Supplier Device PackageDie

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